Method of reducing roughness of a thick insulating layer
US8183128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2008 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Sep 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate, and then smoothing the exposed rough surface of the insulator layer by exposure to a gas plasma in a chamber. The chamber contains therein a gas at a pressure of greater than 0.25 Pa but less than 30 Pa, and the gas plasma is created using a radiofrequency generator applying to the insulator layer a power density greater than 0.6 W/cm2 but less than 10 W/cm2 for at least 10 seconds to less than 200 seconds. Substrate bonding and layer transfer may be carried out subsequently to transfer the thin layer of substrate and the insulator layer to a second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.