Semiconductor processing apparatus and method for using same
US8183158B2 · kind B2 · utility
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2References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 17, 2007 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Nov 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.