Resistive switching memory element including doped silicon electrode

US8183553B2 · kind B2 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventors

• Prashant B. Phatak · San Jose, US
• Tony P. Chiang · Campbell, US
• Michael Miller · Eden Prairie, US
• Wen Wu · Pleasanton, US

Key dates

• Filing date: Oct 29, 2009
• Grant date: May 22, 2012
• Expiry date: Dec 14, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/20

Abstract

A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.