High efficiency group III nitride LED with lenticular surface
US8183588B2 · kind B2 · utility
5Cited by
111References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 11, 2009 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Aug 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.