Stacked trench metal-oxide-semiconductor field effect transistor device

US8183629B2 · kind B2 · utility

Assignee

• Vishay-Siliconix, LLC · US

Inventors

• Deva Pattanayak · Saratoga, US
• Jason Qi · Frisco, US
• Yuming Bai · Union City, US
• Kam Hong Lui · Santa Clara, US
• Ronald Wong · Campbell, US

Key dates

• Filing date: Mar 18, 2008
• Grant date: May 22, 2012
• Expiry date: Feb 26, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.