Non-contact etch annealing of strained layers

US8187377B2 · kind B2 · utility

Assignee

• Silicon Genesis Corporation · US

Inventors

• Igor J. Malik · Palo Alto, US
• Sien G. Kang · Pleasanton, US
• Martin Fuerfanger · Ebersberg, DE
• Harry Kirk · Campbell, US
• Ariel Flat · Palo Alto, US
• Michael I. Current · Mountain View, US
• Philip James Ong · Milpitas, US

Key dates

• Filing date: Oct 4, 2002
• Grant date: May 29, 2012
• Expiry date: Sep 5, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02658
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.