Hydrochloric acid etch and low temperature epitaxy in a single chamber for raised source-drain fabrication
US8187975B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2010 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Dec 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A raised source-drain structure is formed using a process wherein a semiconductor structure is received in a process chamber that is adapted to support both an etching process and an epitaxial growth process. This semiconductor structure includes a source region and a drain region, wherein the source and drain regions each include a damaged surface layer. The process chamber is controlled to set a desired atmosphere and set a desired temperature. At the desired atmosphere and temperature, the etching process of process chamber is used to remove the damaged surface layers from the source and drain regions and expose an interface surface. Without releasing the desired atmosphere and while maintaining the desired temperature, the epitaxial growth process of the process chamber is used to grow, from the exposed interface surface, a raised region above each of the source and drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.