Semiconductor devices and methods of manufacture thereof

US8188551B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Schulz · Austin, US
• Hongfa Luan · Austin, US

Key dates

• Filing date: Sep 30, 2005
• Grant date: May 29, 2012
• Expiry date: Dec 13, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/011

Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. A complimentary metal oxide semiconductor (CMOS) device includes a PMOS transistor having at least two first gate electrodes comprising a first parameter, and an NMOS transistor having at least two second gate electrodes comprising a second parameter, wherein the second parameter is different than the first parameter. The first parameter and the second parameter may comprise the thickness or the dopant profile of the gate electrode materials of the PMOS and NMOS transistors. The first and second parameter of the at least two first gate electrodes and the at least two second gate electrodes establish the work function of the PMOS and NMOS transistors, respectively.