Integrated semiconductor device
US8188572B2 · kind B2 · utility
3Cited by
12References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2011 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Apr 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.