Using high-k dielectrics as highly selective etch stop materials in semiconductor devices

US8198166B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Thorsten Kammler · Radeberg, DE
• Ralf Richter · Dresden, DE
• Markus Lenski · Dresden, DE
• Gunter Grasshoff · Radebeul, DE

Key dates

• Filing date: Jul 27, 2010
• Grant date: Jun 12, 2012
• Expiry date: Jul 27, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

A spacer structure in sophisticated semiconductor devices is formed on the basis of a high-k dielectric material, which provides superior etch resistivity compared to conventionally used silicon dioxide liners. Consequently, a reduced thickness of the etch stop material may nevertheless provide superior etch resistivity, thereby reducing negative effects, such as dopant loss in the drain and source extension regions, creating a pronounced surface topography and the like, as are typically associated with conventional spacer material systems.