Patent · US Active

MEMS devices and methods of manufacture thereof

US8198690B2 · kind B2 · utility

1Cited by

14References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Florian Schoen · Altdorf, DE
Wolfgang Raberg · Sauerlach, DE
Bernhard Winkler · Birkenfeld, DE
Werner Weber · Munich, DE

Key dates

Filing date	Aug 10, 2010
Grant date	Jun 12, 2012
Priority date	—
Expiry date	Nov 27, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/732
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.