Improvements for reducing electromigration effect in an integrated circuit
US8202798B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2007 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Mar 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit comprising one or more dielectric layers the or each dielectric layer being provided with one or more interconnects wherein the interconnect comprises metallic atoms moving from a first region of the interconnect to a second region of the interconnect when a current flows, characterized in that the interconnect comprises a donor zone in the first region of the interconnect for providing metallic atoms in order to compensate for movement of atoms from the first region and a receptor zone at the second region of the interconnect for receiving metallic atoms in order to compensate for movement of atoms to the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.