Two-dimensional condensation for uniaxially strained semiconductor fins

US8211772B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Jack T. Kavalieros · Portland, US
• Nancy Zelick · Portland, US
• Been-Yih Jin · Lake Oswego, US
• Markus Kuhn · Hillsboro, US
• Stephen M. Cea · Hillsboro, US

Key dates

• Filing date: Dec 23, 2009
• Grant date: Jul 3, 2012
• Expiry date: May 19, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/832

Abstract

Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.