Inventor · Portland, OR, US

Nancy Zelick

21Patents
8h-index
34Co-inventors
71Inventor score

Filing activity: Aug 10, 2004 → Sep 29, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US7348284B2 Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow Emerging Cross-Sectional Technologies 98 Expired
US8211772B2 Two-dimensional condensation for uniaxially strained semiconductor fins Electricity 60 Active
US7960794B2 Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow Emerging Cross-Sectional Technologies 15 Active
US8558279B2 Non-planar device having uniaxially strained semiconductor body and method of making same Electricity 11 Active
US8872225B2 Defect transferred and lattice mismatched epitaxial film Electricity 10 Active
US9391181B2 Lattice mismatched hetero-epitaxial film Electricity 9 Active
US9029835B2 Epitaxial film on nanoscale structure Electricity 9 Active
US8334184B2 Polish to remove topography in sacrificial gate layer prior to gate patterning Electricity 8 Active
US9711598B2 Two-dimensional condensation for uniaxially strained semiconductor fins Electricity 3 Active
US9159835B2 Two-dimensional condensation for uniaxially strained semiconductor fins Electricity 3 Active
US9640537B2 Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy Electricity 2 Active
US10249490B2 Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy Electricity 2 Active
US11164974B2 Channel layer formed in an art trench Electricity 1 Active
US8878363B2 Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same Electricity 1 Active
US10756198B2 Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same Electricity 0 Active
US10304929B2 Two-dimensional condensation for uniaxially strained semiconductor fins Electricity 0 Active
US9865684B2 Nanoscale structure with epitaxial film having a recessed bottom portion Electricity 0 Active
US11631737B2 Ingaas epi structure and wet etch process for enabling III-v GAA in art trench Electricity 0 Active
US9680013B2 Non-planar device having uniaxially strained semiconductor body and method of making same Electricity 0 Active
US9768269B2 Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same Electricity 0 Active
US9419140B2 Two-dimensional condensation for uniaxially strained semiconductor fins Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.