Method for fabricating a high-K dielectric layer

US8211812B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Lars-Ake Ragnarsson · New York, US
• Paul A. Zimmerman · Phoenix, US
• Kazuhiko Yamamoto · Daito, JP
• Tom Schram · Rixensart, BE
• Wim Deweerd · San Jose, US
• David Paul Brunco · Latham, US
• Stefan De Gendt · Wijnegem, BE
• Wilfried Vandervorst · Mechelen, BE

Key dates

• Filing date: Apr 16, 2008
• Grant date: Jul 3, 2012
• Expiry date: Jan 14, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.