Arsenic-containing variable resistance materials
US8217379B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2009 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Oct 31, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A variable resistance material for memory applications. The material includes a base Ge—Sb—Te composition and further includes As-doping. The materials were included in variable resistance memory devices. Incorporation of As in the variable resistance composition led to a significant increase in the operational life of the device and, unexpectedly, did not reduce the programming speed of the device. In one embodiment, the composition includes at atomic concentration of Ge in the range from 7%-13%, an atomic concentration of Sb in the range from 50%-70%, an atomic concentration of Te in the range from 20%-30%, and an atomic concentration of As in the range from 2%-15%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.