Nitride semiconductor heterostructures and related methods
US8222650B2 · kind B2 · utility
28Cited by
95References
27Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 12, 2009 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Feb 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.