Method and system for tuning advanced process control parameters
US8229588B2 · kind B2 · utility
25Cited by
23References
17Claims
0Family size
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Key dates
| Filing date | Mar 3, 2009 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Nov 23, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05B13/044
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.