Patent · US Active

High-K metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning

US8232188B2 · kind B2 · utility

7Cited by

2References

9Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Sven Beyer · Dresden, DE
Klaus Hempel · Dresden, DE
Thilo Scheiper · Dresden, DE
Stefanie Steiner · Hoyerswerda - Wojerecy, DE

Key dates

Filing date	Oct 15, 2010
Grant date	Jul 31, 2012
Priority date	—
Expiry date	Oct 15, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0177
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a replacement gate approach in sophisticated semiconductor devices, the place-holder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.