Within-sequence metrology based process tuning for adaptive self-aligned double patterning
US8232212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2008 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | May 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for adaptive self-aligned dual patterning and method thereof. The method includes providing a substrate to a processing platform configured to perform an etch process and a deposition process and a metrology unit configured for in-vacuo critical dimension (CD) measurement. The in-vacuo CD measurement is utilized for feedforward adaptive control of the process sequence processing platform or for feedback and feedforward adaptive control of chamber process parameters. In one aspect, a first layer of a multi-layered masking stack is etched to form a template mask, an in-vacuo CD measurement of the template mask is made, and a spacer is formed, adjacent to the template mask, to a width that is dependent on the CD measurement of the template mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.