Method for low-K dielectric etch with reduced damage
US8236188B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2010 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Feb 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.