Method of passivating chemical mechanical polishing compositions for copper film planarization processes
US8236695B2 · kind B2 · utility
5Cited by
21References
20Claims
0Family size
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Key dates
| Filing date | Sep 19, 2008 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Apr 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.