Multi-level phase change memory device, program method thereof, and method and system including the same
US8238147B2 · kind B2 · utility
4Cited by
9References
19Claims
0Family size
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Key dates
| Filing date | Sep 11, 2008 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Jun 8, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/754
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a program method for a multi-level phase change memory device, multi-level data to be programmed in a selected memory cell is received, and a program signal is applied to the selected memory cell according to the received multi-level data. Herein, a rising time of the program signal is set to be longer than a falling time of the program signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.