Non-volatile memory cell healing
US8238170B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2010 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Sep 28, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure provide methods, devices, modules, and systems for healing non-volatile memory cells. One method includes biasing a first select gate transistor coupled to a string of memory cells at a first voltage, biasing a second select gate transistor coupled to the string at a second voltage, applying a first healing voltage to a first edge word line in order to extract charge accumulated between the first select gate transistor and a first edge memory cell stack of the string, and applying a second healing voltage to a second edge word line in order to extract charge accumulated between the second select gate transistor and a second edge memory cell stack of the string.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.