Method of fabricating a back-illuminated image sensor
US8241942B2 · kind B2 · utility
5Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Sep 22, 2009 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Sep 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
A method of fabricating a back-illuminated image sensor that includes the steps of providing a first substrate of a semiconductor layer, in particular a silicon layer, forming electronic device structures over the semiconductor layer and, only then, doping the semiconductor layer. By doing so, improved dopant profiles and electrical properties of photodiodes can be achieved such that the final product, namely an image sensor, has a better quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.