Patent · US Active

Method for increasing penetration depth of drain and source implantation species for a given gate height

US8241973B2 · kind B2 · utility

2Cited by

5References

16Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Uwe Griebenow · Markkleeberg, DE
Kai Frohberg · Meißen, DE
Frank Feustel · Dresden, DE
Thomas Werner · Radebeul, DE

Key dates

Filing date	Sep 5, 2008
Grant date	Aug 14, 2012
Priority date	—
Expiry date	Feb 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0227
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The thickness of drain and source areas may be reduced by a cavity etch used for refilling the cavities with an appropriate semiconductor material, wherein, prior to the epitaxial growth, an implantation process may be performed so as to allow the formation of deep drain and source areas without contributing to unwanted channel doping for a given critical gate height. In other cases, the effective ion blocking length of the gate electrode structure may be enhanced by performing a tilted implantation step for incorporating deep drain and source regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.