Short channel transistor with reduced length variation by using amorphous electrode material during implantation

US8241977B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Thilo Scheiper · Dresden, DE
• Andy Wei · Queensbury, US
• Sven Beyer · Dresden, DE

Key dates

• Filing date: Jan 25, 2010
• Grant date: Aug 14, 2012
• Expiry date: May 3, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In sophisticated transistor elements, enhanced profile uniformity along the transistor width direction may be accomplished by using a gate material in an amorphous state, thereby reducing channeling effects and line edge roughness. In sophisticated high-k metal gate approaches, an appropriate sequence may be applied to avoid a change of the amorphous state prior to performing the critical implantation processes for forming drain and source extension regions and halo regions.