Method for preparing a germanium layer from a silicon-germanium-on-isolator substrate
US8247313B2 · kind B2 · utility
1Cited by
5References
13Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 7, 2008 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Feb 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a germanium-on-insulator layer from an SGOI substrate, including: a) depositing on the substrate a layer of a metallic element M capable of selectively forming a silicide, the layer being in contact with a silicon-germanium alloy layer; and b) a reaction between the alloy layer and the layer of a metallic element M, by which a stack of M silicide-germanium-insulator layers is obtained. Such a method may, for example, find application to production of electronic devices such as MOSFET transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.