Method for removing photoresist
US8252515B2 · kind B2 · utility
0Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2009 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Sep 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing a photoresist is disclosed. First, a substrate including a patterned photoresist is provided. Second, an ion implantation is carried out on the substrate. Then, a non-oxidative pre-treatment is carried out on the substrate. The non-oxidative pre-treatment provides hydrogen, a carrier gas and plasma. Later, a photoresist-stripping step is carried out so that the photoresist can be completely removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.