Integrated circuit with floating-gate electrodes including a transition metal and corresponding manufacturing method
US8258564B2 · kind B2 · utility
2Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2008 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Oct 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
Abstract
An integrated circuit is described. The integrated circuit may comprise a multitude of floating-gate electrodes, wherein at least one of the floating-gate electrodes has a lower width and an upper width, the lower width being larger than the upper width, and wherein the at least one of the floating-gate electrodes comprises a transition metal. A corresponding manufacturing method for an integrated circuit is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.