Patent · US Active

Integrated circuit with floating-gate electrodes including a transition metal and corresponding manufacturing method

US8258564B2 · kind B2 · utility

2Cited by
4References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 17, 2008
Grant dateSep 4, 2012
Priority date
Expiry dateOct 30, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B41/30

Abstract

An integrated circuit is described. The integrated circuit may comprise a multitude of floating-gate electrodes, wherein at least one of the floating-gate electrodes has a lower width and an upper width, the lower width being larger than the upper width, and wherein the at least one of the floating-gate electrodes comprises a transition metal. A corresponding manufacturing method for an integrated circuit is also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.