Plasma-enhanced deposition of metal carbide films
US8268409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2007 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Jun 14, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/515
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound and one or more plasma-excited species of a carbon-containing compound. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound and one or more plasma-excited species of a carbon-containing compound. The substrate is further exposed to a reducing agent. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.