Methods of fabricating substrates
US8273634B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2008 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Jul 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a substrate includes forming first and second spaced features over a substrate. The first spaced features have elevationally outermost regions which are different in composition from elevationally outermost regions of the second spaced features. The first and second spaced features alternate with one another. Every other first feature is removed from the substrate and pairs of immediately adjacent second features are formed which alternate with individual of remaining of the first features. After such act of removing, the substrate is processed through a mask pattern comprising the pairs of immediately adjacent second features which alternate with individual of the remaining of the first features. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.