Assisting FGL oscillations with perpendicular anisotropy for MAMR
US8274811B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2010 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Dec 18, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1193
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin transfer oscillator (STO) structure is disclosed that includes two assist layers with perpendicular magnetic anisotropy (PMA) to enable a field generation layer (FGL) to achieve an oscillation state at lower current density for MAMR applications. In one embodiment, the STO is formed between a main pole and write shield and the FGL has a synthetic anti-ferromagnetic structure. The STO configuration may be represented by seed layer/spin injection layer (SIL)/spacer/PMA layer 1/FGL/spacer/PMA layer 2/capping layer. The spacer may be Cu for giant magnetoresistive (GMR) devices or a metal oxide for tunneling magnetoresistive (TMR) devices. Alternatively, the FGL is a single ferromagnetic layer and the second PMA assist layer has a synthetic structure including two PMA layers with magnetic moment in opposite directions in a seed layer/SIL/spacer/PMA assist 1/FGL/spacer/PMA assist 2/capping layer configuration. SIL and PMA assist layers are laminates of (CoFe/Ni)x or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.