CVD apparatus and method of cleaning the CVD apparatus
US8277560B2 · kind B2 · utility
Assignees
- National Institute of Advanced Industrial Science and Technology
- Canon Anelva Corporation
- ULVAC, INC.
- KANTO DENKA KOGYO CO., LTD.
- SANYO ELECTRIC CO., LTD.
- Showa Denko K.K.
- SONY GROUP CORPORATION
- TOKYO ELECTRON LIMITED
- HITACHI KOKUSAI ELECTRIC INC.
- PANASONIC HOLDINGS CORPORATION
- Mitsubishi Electric Corporation
- RENESAS ELECTRONICS CORPORATION
Inventors
Key dates
| Filing date | Mar 19, 2003 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Nov 14, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.