Spin polarised magnetic device

US8279666B2 · kind B2 · utility

Assignees

• INSTITUT POLYTECHNIQUE DE GRENOBLE · FR
• LE CENTRE NATIONAL DE LARECHERCHE SCIENTIFIQUE · FR
• Le Commissariat à l'énergie atomique et aux énergies alternatives (CEA) · FR

Inventors

• Bernard Dieny · Le Pont-de-Claix, FR
• Cristian Papusoi · Santa Clara, US
• Ursula Ebels · Grenoble, FR
• Dimitri Houssameddine · Sunnyvale, US
• Liliana Buda-Prejbeanu · Saint-Égrève, FR
• Ricardo Sousa · Amadora, PT

Key dates

• Filing date: May 26, 2010
• Grant date: Oct 2, 2012
• Expiry date: Dec 3, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A magnetic device includes a magnetic reference layer with a fixed magnetization direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetization direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarizing layer with a magnetization perpendicular to that of the reference layer, and located out of the plane of the spin polarizing layer if the magnetization of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarizing layer if the magnetization of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarizing layer and the storage layer.