Non-planar germanium quantum well devices

US8283653B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Ravi Pillarisetty · Portland, US
• Jack T. Kavalieros · Portland, US
• Willy Rachmady · Beaverton, US
• Uday Shah · Portland, US
• Benjamin Chu-Kung · Portland, US
• Marko Radosavljevic · Portland, US
• Niloy Mukherjee · Beaverton, US
• Gilbert Dewey · Beaverton, US
• Been-Yih Jin · Lake Oswego, US
• Robert S. Chau · Beaverton, US

Key dates

• Filing date: Dec 23, 2009
• Grant date: Oct 9, 2012
• Expiry date: Jun 17, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a germanium fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e.g. SiGe or GaAs buffer on silicon), a IV or III-V material barrier layer (e.g., SiGe or GaAs or AlGaAs), a doping layer (e.g., delta/modulation doped), and an undoped germanium quantum well layer. An undoped germanium fin structure is formed in the quantum well structure, and a top barrier layer deposited over the fin structure. A gate metal can be deposited across the fin structure. Drain/source regions can be formed at respective ends of the fin structure.