Patent · US Active

Microelectronic structure including air gap

US8288268B2 · kind B2 · utility

17Cited by

5References

20Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Daniel C. Edelstein · White Plains, US
David V. Horak · South Burlington, US
Elbert E. Huang · Carmel, US
Satyanarayana V. Nitta · Poughquag, US
Takeshi Nogami · Schenectady, US
Shom Ponoth · Irvine, US
Terry A. Spooner · Clifton Park, US

Key dates

Filing date	Apr 29, 2010
Grant date	Oct 16, 2012
Priority date	—
Expiry date	Dec 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2201/09063
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.