Double exposure patterning with carbonaceous hardmask

US8293460B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Hui-Wan Chen · Taipei, TW
• Chorng-Ping Chang · Saratoga, US
• Yongmei Chen · 丈亭镇, CN
• Huixiong Dai · San Jose, US
• Jiahua Yu · Milpitas, US
• Susie Xiuru Yang · Sunnyvale, US
• Xumou Xu · Campbell, US
• Christopher Dennis Bencher · San Jose, US
• Raymond Hung · Palo Alto, US
• Michael Duane · Austin, US
• Christopher S. Ngai · Burlingame, US
• Jen Shu · Saratoga, US
• Kenneth P. MacWilliams · Monte Sereno, US

Key dates

• Filing date: Dec 19, 2008
• Grant date: Oct 23, 2012
• Expiry date: Apr 2, 2031

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/2022
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.