Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor
US8299541B2 · kind B2 · utility
0Cited by
7References
25Claims
0Family size
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Key dates
| Filing date | Aug 10, 2009 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A region is locally modified so as to create a zone that extends as far as at least part of the surface of the region and is formed from a material that can be removed selectively with respect to the material of the region. The region is then covered with an insulating material. An orifice is formed in the insulating material emerging at the surface of the zone. The selectively removable material is removed from the zone through the orifice so as to form a cavity in place of the zone. The cavity and the orifice are then filled with at least one electrically conducting material so as to form a contact pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.