Robin Cerutti
5Patents
1h-index
8Co-inventors
36Inventor score
Filing activity: Apr 2, 2004 → Aug 10, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7141837B2 | High-density MOS transistor | Electricity | 6 | Expired |
| US7994008B2 | Transistor device with two planar gates and fabrication process | Electricity | 0 | Active |
| US7202518B2 | Integrated dynamic random access memory element, array and process for fabricating such elements | Electricity | 0 | Expired |
| US7601634B2 | Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor | Electricity | 0 | Active |
| US8299541B2 | Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.