Semiconductor device having RF shielding and method therefor
US8299610B1 · kind B1 · utility
8Cited by
23References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2008 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Nov 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacturing has a substrate having a plurality of metal layers. At least one metal layer is exposed on at least one side surface of the semiconductor device. A die is coupled to the substrate. A mold compound encapsulates the die and a top surface of the substrate. A conductive coating is applied to the mold compound and to at least one metal layer exposed on at least one side surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.