High throughput chemical mechanical polishing composition for metal film planarization
US8304344B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2008 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Nov 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.