Power MOSFET with a gate structure of different material
US8309410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2011 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | May 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/671
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor layer of a first conductivity type and a first doping concentration. A first semiconductor region, used as drain, of the first conductivity type has a lower doping concentration than the semiconductor layer and is over the semiconductor layer. A gate dielectric is over the first semiconductor region. A gate electrode over the gate dielectric has a metal-containing center portion and first and second silicon portions on opposite sides of the center portion. A second semiconductor region, used as a channel, of the second conductivity type has a first portion under the first silicon portion and the gate dielectric. A third semiconductor region, used as a source, of the first conductivity type is laterally adjacent to the first portion of the second semiconductor region. The metal-containing center portion, replacing silicon, increases the source to drain breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.