Patent · US Active

Method of patterning a low-k dielectric film

US8314033B2 · kind B2 · utility

1Cited by

1References

10Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Yifeng Zhou · Fremont, US
Srinivas D. Nemani · Sunnyvale, US
Khoi Doan · San Jose, US
Jeremiah T. Pender · San Jose, US

Key dates

Filing date	Mar 24, 2011
Grant date	Nov 20, 2012
Priority date	—
Expiry date	Apr 15, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2221/1063
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A significantly improved low-k dielectric patterning method is described herein using plasma comprising an oxygen radical source and a silicon source to remove the photo-resist layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.