Multi color active regions for white light emitting diode
US8314429B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2010 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Sep 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light emitting diode device has a gallium and nitrogen containing substrate with a surface region with an epitaxial layer overlying the surface region. Preferably the device includes a first active region overlying the surface and configured to emit first electromagnetic radiation having a wavelength ranging from about 405 nm to 490 nm; a second active region overlying the surface and configured to emit second electromagnetic radiation having a wavelength ranging from about 491 nm to about 590 nm; and a third region overlying the surface region and configured to emit third electromagnetic radiation having a wavelength ranging from about 591 nm to about 700 nm. A p-type epitaxial layer covers the first, second, and third active regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.