Inexpensive electrode materials to facilitate rutile phase titanium oxide
US8318572B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Feb 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.