Plasma treatment method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere
US8318605B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Jul 15, 2008 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Sep 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.