Single wafer apparatus for drying semiconductor substrates using an inert gas air-knife
US8322045B2 · kind B2 · utility
9Cited by
269References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2008 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Mar 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67034
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.