Automatic deposition profile targeting
US8323471B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2008 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Oct 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.