Patent · US Active

Automatic deposition profile targeting

US8323471B2 · kind B2 · utility

0Cited by
3References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 21, 2008
Grant dateDec 4, 2012
Priority date
Expiry dateOct 14, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.