Stabilization of high-k dielectric materials

US8323754B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Christopher S. Olsen · Fremont, US
• Pravin K. Narwankar · Sunnyvale, US
• Shreyas Kher · Campbell, US
• Randhir P. S. Thakur · Boise, US
• Shankar Muthukrishnan · San Jose, US
• Philip Allan Kraus · San Jose, US

Key dates

• Filing date: May 21, 2004
• Grant date: Dec 4, 2012
• Expiry date: Feb 4, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate surface, exposing the first layer to a nitridation process, depositing a second layer of the dielectric material on the first layer, exposing the second layer to the nitridation process, and exposing the substrate to an anneal process. In another embodiment, a method for forming a dielectric material on a substrate is provided which includes depositing a metal oxide layer substantially free of silicon on a substrate surface, exposing the metal oxide layer to a nitridation process, and exposing the substrate to an anneal process.